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Near 1.3 μm Emission at Room Temperature from InAsSb/GaAs Self‐Assembled Quantum Dots on GaAs Substrates
Author(s) -
Suzuki K.,
Arakawa Y.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:1<139::aid-pssb139>3.0.co;2-o
Subject(s) - quantum dot , materials science , optoelectronics , gallium arsenide , nanotechnology
We observed for the first time clear emission near 1.3 μm at room temperature from InAs 0.9 Sb 0.1 self‐assembled quantum dots on GaAs substrates. InAs 0.9 Sb 0.1 quantum dots were grown by molecular beam epitaxy using Stranski‐Krastanov growth mode, for application to emission at 1.3 μm lasers. The results showed that the average diameter of quantum dots observed by atomic force microscopy is ∼20 nm. Emission at 1.28 μm with full width at half‐maximum of 52 meV was observed from InAs 0.9 Sb 0.1 quantum dots in an In 0.15 Ga 0.85 As matrix on GaAs substrate. This structure should be very useful for applying quantum dot lasers to optical communication systems for 1.3 μm.