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Spectroscopy and Mechanical Modification of Single Strain‐Induced Quantum Dots
Author(s) -
Bracker A.S.,
Tischler J.G.,
Gammon D.,
Nosho B.Z.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:1<133::aid-pssb133>3.0.co;2-b
Subject(s) - quantum dot , photoluminescence , excited state , spectral line , spectroscopy , emission spectrum , materials science , strain (injury) , line (geometry) , condensed matter physics , atomic physics , molecular physics , chemistry , physics , nanotechnology , optoelectronics , quantum mechanics , medicine , geometry , mathematics
We report the observation of very sharp lines in the photoluminescence spectra of single strain‐induced GaAs quantum dots. By removing self‐assembled GaSb stressors from the sample surface with an atomic force microscope, we have demonstrated that only the largest GaSb stressors are responsible for the sharp strain‐induced quantum dot lines. Spectral line shifts are observed as the quantum dot potential is tuned by modification of the large stressors. The variation of the spectra with laser power density is consistent with emission from multiexciton complexes and excited dot orbital states.