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Temperature Dependent Optical Properties of InAs/AlGaAs Quantum Dots
Author(s) -
Chen X.,
Dawson P.,
Godfrey M.J.,
Hopkinson M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200103)224:1<107::aid-pssb107>3.0.co;2-7
Subject(s) - thermionic emission , quantum dot , photoluminescence , condensed matter physics , materials science , optoelectronics , physics , electron , quantum mechanics
In this paper we describe the results of temperature dependent photoluminescence intensity and decay time measurements on a series of InAs/AlGaAs quantum dot structures where the depth of the confinement potential is varied from sample to sample. By comparison with a simple theoretical model the temperature dependent behaviour is ascibed to a combination of thermally induced occupation of excitonic dark states and thermionic emission of the confined holes.