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Monte Carlo Simulation by Scattered Packet for Semiclassical Transport in Semiconductors: Application to Holes in Silicon
Author(s) -
Amechnoue K.,
Diyadi J.,
Hlou L.,
Vaissière J.C.,
Varani L.,
Aboubacar M.,
Moatadid A.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200102)223:3<657::aid-pssb657>3.0.co;2-4
Subject(s) - monte carlo method , semiclassical physics , statistical physics , dynamic monte carlo method , physics , computational physics , silicon , monte carlo molecular modeling , monte carlo method in statistical physics , kinetic monte carlo , quantum monte carlo , hybrid monte carlo , markov chain monte carlo , quantum mechanics , mathematics , optoelectronics , statistics , quantum
Abstract We present a new Monte Carlo algorithm, using a Scattered Packet technique to calculate transport parameters in semiconductors. This algorithm allows calculations with a great precision and a significant gain in CPU time as compared to the standard Monte Carlo scheme. As application we report the calculation of the correlation function of velocity fluctuations and noise temperature for holes in silicon at T = 300 K. The results are in good agreement with standard Monte Carlo calculations as well as with experimental data.