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Negative Magnetoresistivity from Electron–Electron Interaction Effect in Modulation Doped n‐Channel Si/Si 1—x Ge x Quantum Well Structures
Author(s) -
Shin D.H.,
Kim S.K.,
Kim S.D.,
Rhee J.K.,
Harris J.J.,
Maude D.K.,
Portal J.C.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200102)223:3<649::aid-pssb649>3.0.co;2-0
Subject(s) - electron , doping , condensed matter physics , quantum well , modulation (music) , materials science , fermi gas , electron density , electron transport chain , physics , chemistry , optics , quantum mechanics , biochemistry , acoustics , laser
Magnetoresistivity measurements are made on the two‐dimensional electron gas in a Si/Si 0.7 Ge 0.3 modulation‐doped quantum well. The temperature ( T )‐dependent negative magnetoresistivity, observed below 0.1 T, clearly shows the effect of electron–electron interactions.