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Numerical Determination of Shallow Electronic States Bound by Dislocations in Semiconductors
Author(s) -
Farvacque J.L.,
François P.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200102)223:3<635::aid-pssb635>3.0.co;2-k
Subject(s) - dislocation , envelope (radar) , bound state , semiconductor , deformation (meteorology) , plane wave , wave function , condensed matter physics , electron , strain (injury) , piezoelectricity , coupling (piping) , physics , atomic physics , materials science , quantum mechanics , medicine , telecommunications , radar , meteorology , computer science , acoustics , metallurgy
Using a plane wave basis, we have solved numerically the Schrödinger equation of the envelope function in the case of dislocation strain field binding potentials (deformation and piezoelectric coupling). Shallow one‐dimensional bands are found for both electrons and holes, characterised by larger binding energies than those previously found by approximated analytical methods, 1D dislocation bands have also been computed and show a splitting of light and heavy hole bands resulting into four distinct bands.