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Modelling Electronic Spectra of Crystals in Electric Fields with Various Orientations
Author(s) -
Losev A.,
Vlaev S.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200102)223:3<627::aid-pssb627>3.0.co;2-g
Subject(s) - electric field , spectral line , condensed matter physics , crystal (programming language) , perpendicular , field (mathematics) , atom (system on chip) , physics , molecular physics , materials science , geometry , quantum mechanics , mathematics , computer science , pure mathematics , embedded system , programming language
The present work considers the electronic spectra of a simple two‐dimensional (2D) cubic crystal and a three‐dimensional (3D) GaAs crystal when a constant electric field is applied. The 2D case is treated within the empirical tight‐binding (TB) model, taking one s‐orbital per atom and accounting for the interactions with neighbours up to fourth order. For the 3D case a semiempirical sp 3 s* TB model is used, taking into account the spin and first neighbours. The local densities of states (LDOSs) have been calculated for different field intensities, showing that for a sufficiently strong field the 2D LDOS turns into the 1D LDOS corresponding to chains perpendicular to the field orientation. This is a novel observation achieved through the use of neighbours farther than the first. The 3D LDOS of a GaAs crystal projected by a strong field on the [001] direction is found to coincide with the 2D LDOS of an isolated atomic layer.