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GaAlAs‐Based Micromachined Accelerometer
Author(s) -
Konczewicz L.,
Lee H.Y.,
Sadowski M.L.,
Letartre X.,
Leclercq J.L.,
Viktorovitch P.,
Robert J.L.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<593::aid-pssb593>3.0.co;2-a
Subject(s) - materials science , strain gauge , etching (microfabrication) , heterojunction , accelerometer , piezoresistive effect , optoelectronics , flexural strength , beam (structure) , hydrostatic pressure , alloy , composite material , superlattice , optics , computer science , physics , layer (electronics) , thermodynamics , operating system
To develop micromachined accelerometers based on GaAlAs heterostructures, a selective etching procedure has been optimized as a function of structure and composition. The test structures (a Ga x Al 1— x As ( x = 0.32) alloy and short period (GaAs) 9 –(AlAs) 4 superlattices) were grown on (001) GaAs substrates. The strain gauge was deposited along the longitudinal direction of the micro‐beam, with a width of 25 or 35 μm and the beam length ranging from 100 to 1000 μm. The measurements of piezoresistive properties were performed for tensile strains by flexural tests. The gauge factors G (Δ R / R 0 = Gε ), obtained for the Ga x Al 1– x As epilayer can be estimated to be about 60. A complementary study was performed under hydrostatic pressure.