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Assessing the Performance of Visible (665 nm) Vertical Cavity Surface Emitting Lasers Using High Pressure and Low Temperature Techniques
Author(s) -
Knowles G.,
Sweeney S.J.,
Sale T.E.,
Adams A.R.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<581::aid-pssb581>3.0.co;2-m
Subject(s) - laser , materials science , optoelectronics , leakage (economics) , rate equation , slope efficiency , optics , atmospheric temperature range , vertical cavity surface emitting laser , semiconductor laser theory , diode , physics , fiber laser , wavelength , quantum mechanics , meteorology , kinetics , economics , macroeconomics
The effects of carrier leakage and gain‐cavity alignment on the temperature dependence of the threshold current ( I th ) in visible vertical cavity surface emitting lasers (VCSELs) are investigated. In order to assess the two effects and the degree to which they couple we have performed pressure and temperature experiments on VCSELs and their equivalent edge emitting lasers (EEL). We have established that the peak of the gain moves with pressure at a rate of 72 meV GPa —1 more than three times the rate of 22 meV GPa —1 for the cavity mode. However, we show that over the temperature operating range carrier leakage into the indirect X‐minima is the major contributor to an increased I th , nevertheless optimised gain‐cavity alignment can lead to more stable operation.