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Quantifying the Effect of Indirect Carrier Leakage on Visible Al(GaInP) Lasers Using High Pressures and Low Temperatures
Author(s) -
Sweeney S.J.,
Knowles G.,
Sale T.E.,
Adams A.R.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<567::aid-pssb567>3.0.co;2-6
Subject(s) - wavelength , materials science , laser , optoelectronics , leakage (economics) , operating temperature , radiative transfer , optics , physics , thermodynamics , economics , macroeconomics
The extreme temperature sensitivity of the threshold current, I th , above room temperature in visible edge‐emitting lasers (EELs) is investigated. From measurements as a function of temperature we find that I th is dominated by the radiative current, I Rad up to ∼230 K so I th ≈ I Rad as expected for an ideal device. However, above 230 K, I th increases sharply due to the onset of indirect carrier leakage which we calculate to be ∼20% of I th at room temperature at an emission wavelength of 672 nm. By 350 K it accounts for >70% of I th . The operating wavelength of the device can be reduced by applying pressure and then we observe that the leakage rapidly increases and at 655 nm it forms ∼70% of I th at room temperature. This gives rise to a significant deterioration in the light output characteristics and has important implications for producing high power EELs and VCSEL structures based upon Al(GaInP) at these shorter operating wavelengths.