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High Pressure as a Tool to Study Electron Localization
Author(s) -
Hill R.J.A.,
Itskevich I.E.,
Stoddart S.T.,
Murphy H.M.,
Thornton A.S.G.,
Main P.C.,
Eaves L.,
Henini M.,
Maude D.K.,
Portal J.C.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<555::aid-pssb555>3.0.co;2-i
Subject(s) - quantum tunnelling , electron , diode , quantum dot , phase (matter) , condensed matter physics , layer (electronics) , resonant tunneling diode , quantum well , tunnel diode , materials science , physics , optoelectronics , nanotechnology , optics , laser , quantum mechanics
We have used high pressure to investigate resonant tunnelling in a single‐barrier, n–i–n GaAs/AlAs/GaAs diode with an embedded layer of InAs self‐assembled quantum dots (SAQD). We have obtained convincing evidence for resonant tunnelling through individual Γ‐valley‐related electron states that we associate with the SAQD. The tunnel current through a SAQD was used as a local probe of a localized phase of a two‐dimensional electron system in the accumulation layer of the diode. We have found evidence that at low densities, the localized electrons form relatively large, high‐density clusters.