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Giant Negative Magnetoresistance in Uniaxially Stressed p‐Ge and p‐InSb Single Crystals
Author(s) -
Obukhov S.A.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<535::aid-pssb535>3.0.co;2-q
Subject(s) - condensed matter physics , magnetoresistance , impurity , materials science , conduction band , magnetic field , thermal conduction , charge carrier , chemistry , electron , physics , quantum mechanics , organic chemistry , composite material
The stress induced giant negative magnetoresistance (GNMR), ϱ 0 / ϱ B ∼ 10 2 , in p‐Ge and p‐InSb single crystals is studied. Temperature dependence investigation shows that GNMR is caused by the decrease of impurity conduction energy in magnetic field. The proposed model describes this effect as the reduction of exchange interaction energy between charge carriers in the antiferromagnetically ordered impurity band.