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Hall Mobility and Interband Scattering of Electrons in the Vicinity of Different‐Valley Crossing L 1 ⇄ Δ 1 in Ge with Doubly‐Charged Impurity of Gold
Author(s) -
Daunov M.I.,
Kamilov I.K.,
Gabibov S.F.,
Akchurin R.Kh.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<525::aid-pssb525>3.0.co;2-u
Subject(s) - impurity , scattering , electron , hall effect , condensed matter physics , electron mobility , physics , ionized impurity scattering , materials science , atomic physics , electrical resistivity and conductivity , nuclear physics , optics , quantum mechanics
Hydrostatic pressure (up to 7 GPa at 295 K) effects for the specific resistance and the Hall mobility of electrons in Ge with a doubly‐charged level of gold impurity are investigated for the first time. The parameters S and S ′ featuring the intensity of interband‐scattering electrons of the L 1 ‐ and Δ 1 ‐subband, respectively, in the vicinity of different‐valley crossing were determined as 0.53 and 0.26.