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Strain‐Induced MI Transition in n‐Si and n‐Ge: Physical Mechanisms and Transport Phenomena
Author(s) -
Budzulyak S.I.,
Gorin A.E.,
Ermakov V.M.,
Kolomoets V.V.,
Venger E.F.,
Verma P.,
Yamada M.,
Liarokapis E.,
Tunstall D.P.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<519::aid-pssb519>3.0.co;2-i
Subject(s) - materials science , condensed matter physics , semiconductor , metal–insulator transition , strain (injury) , effective mass (spring–mass system) , activation energy , electrical resistivity and conductivity , conductivity , nonmetal , band gap , insulator (electricity) , metal , chemistry , optoelectronics , physics , metallurgy , medicine , quantum mechanics
The analysis of experimental data on the pressure and temperature dependences of conductivity, the current–voltage characteristics (IVC), and the pressure dependence of the activation energy in n‐Si and n‐Ge crystals in the region of strain‐induced metal–insulator transition (MIT) is presented. A remarkable change of the effective mass of carriers in semiconductors caused by strain‐induced transformation of the energy band structure is the main necessary condition for realization of this kind of metal–nonmetal transition.