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Pressure Effect on Parallel Transport in Low‐Dimensional CdTe/CdMgTe Heterostructures
Author(s) -
Wasik D.,
Baj M.,
Dmowski L.,
SiwiecMatuszyk J.,
Janik E.,
Wojtowicz T.,
Karczewski G.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<513::aid-pssb513>3.0.co;2-5
Subject(s) - heterojunction , thermal conduction , hydrostatic pressure , materials science , cadmium telluride photovoltaics , layer (electronics) , condensed matter physics , optoelectronics , nanotechnology , composite material , physics , mechanics
We have shown that in CdTe/Cd 1— x Mg x Te heterostructures revealing parallel transport, hydrostatic pressure induces a decrease in both 2D conduction in the quantum well and in low mobility parallel channel. This behaviour, contrary to III–V heterostructures, is due to persistent decrease of the mobility. For samples having thick buffer layer the contribution of the parallel conduction is practically eliminated at high pressure with 2D conduction remaining dominant, while for samples with thin buffer layer the situation with pure 2D conduction is not achieved.