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High‐Pressure High‐Temperature Studies of Structural Ordering in GaSb
Author(s) -
Vanpeteghem C.B.,
Nelmes R.J.,
Allan D.R.,
McMahon M.I.,
Sapelkin A.V.,
Bayliss S.C.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<405::aid-pssb405>3.0.co;2-5
Subject(s) - extended x ray absorption fine structure , high pressure , materials science , diffraction , short range order , atmospheric temperature range , crystallography , range (aeronautics) , semiconductor , x ray crystallography , condensed matter physics , chemistry , thermodynamics , optics , absorption spectroscopy , optoelectronics , physics , composite material
Abstract Both angle‐dispersive and EXAFS experiments have been carried out to investigate the structural ordering of the high‐pressure (hp) and high‐pressure high‐temperature (hp/ht) phases of GaSb. The diffraction patterns of all the different phases of GaSb have shown an absence of long‐range order, while the EXAFS studies have demonstrated the lack of complete short‐range order. GaSb is the only semiconductor compound among the III–V and II–VI systems to present such behaviour in all of its different hp and hp/ht phases.