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Study on Pressure Working Time and Releasing Rate for Phase Transformation of Ge
Author(s) -
Ohishi M.,
Akiyama S.,
Uchida K.,
Nozaki S.,
Morisaki H.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<391::aid-pssb391>3.0.co;2-q
Subject(s) - wurtzite crystal structure , atmospheric pressure , raman spectroscopy , nanocrystalline material , phase (matter) , analytical chemistry (journal) , materials science , ultraviolet , germanium , crystallography , chemistry , optics , nanotechnology , metallurgy , optoelectronics , meteorology , chromatography , physics , organic chemistry , zinc , silicon
Abstract The direct transformation from Ge‐I to Ge‐III has been investigated by Raman spectroscopy measurements. The Ge sample, which consisted of the Ge‐I phase at atmospheric pressure, did not transform to another phase under a pressure of 6 GPa for 10 days. After the slow release of pressure at a rate of 1 GPa/h to atmospheric pressure, a peak around 302 cm —1 and two indistinct peaks around 274 and 285 cm —1 have been noted. The sample was thought to consist of a mixture of Ge‐I, wurtzite, and Ge‐III phases. After 4 h, the peak corresponding to Ge‐III almost disappeared. The presence of both Ge‐I and Ge‐III phases has also been noted in photo‐oxidized Ge nanocrystalline films using ultraviolet light exposure.