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Theory of High Pressure Phases of Group‐IV and III–V Semiconductors
Author(s) -
Ackland G.J.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:2<361::aid-pssb361>3.0.co;2-1
Subject(s) - metastability , semiconductor , diamond , thermodynamics , materials science , high pressure , tin , group (periodic table) , crystal structure , chemistry , condensed matter physics , chemical physics , crystallography , physics , quantum mechanics , metallurgy , optoelectronics
Under high pressure the open, covalent structure of group‐IV and III–V semiconductors collapses to a denser metallic crystal structure. On further pressure increase a range of behaviours is seen. There has been an enormous amout of theoretical and experimental work recently on these phases, and this paper draws together the underlying themes and trends to give the theoretical interpretations of the system, from generic ball and stick thermodynamics, which explains the collapse from diamond to the β‐tin and Imma phases, through free electron theory which explains some of the trends in c / a ratios of the various structures, on to accurate electronic structure calculations of specific systems which can determine which of closely related structures have lowest free energy. Also, the observation and causes of disorder and metastability are discussed, and the prospects for high‐pressure synthesis in making new materials.