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Pressure‐Induced Metallization and Electronic–Magnetic Properties of Some Mott Insulators
Author(s) -
Pasternak M.P.,
Taylor R.D.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<65::aid-pssb65>3.0.co;2-3
Subject(s) - condensed matter physics , magnetism , diamond anvil cell , valence (chemistry) , mott transition , mott insulator , materials science , electronic correlation , electrical resistivity and conductivity , ion , electronic structure , metal–insulator transition , spin crossover , electron , high pressure , metal , chemistry , superconductivity , hubbard model , physics , engineering physics , organic chemistry , quantum mechanics , metallurgy
Combining the techniques of Mössbauer spectroscopy, synchrotron XRD, and electrical resistivity in conjunction with diamond‐anvil cells has enabled us to discover and study new phenomena in magnetism and electronic correlations at high density. It is shown that Hund's rule concerning the high‐spin state in transition metal (TM) compounds does not always hold at high pressures, resulting in a spin‐crossover and collapse of the magnetic state for even‐valence TM ions and for a decline of the magnetic exchange for odd‐valence ions. This mechanism is in competition with the breakdown of the d–d electron correlation (Mott transition) in pressure transformation of Mott insulators into normal metals. The experimental issues are described and a few examples of studies of breakdown of the Mott‐Hubbard state at very high pressures are presented.