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Wurtzite Silicon Nanocrystals Deposited by the Cluster‐Beam Evaporation Technique
Author(s) -
Zhang J.Y.,
Ono H.,
Uchida K.,
Nozaki S.,
Morisaki H.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<41::aid-pssb41>3.0.co;2-v
Subject(s) - wurtzite crystal structure , materials science , raman spectroscopy , silicon , nanocrystal , evaporation , x ray photoelectron spectroscopy , crystallite , crystallography , nanotechnology , optoelectronics , optics , chemistry , chemical engineering , engineering , physics , zinc , metallurgy , thermodynamics
Wurtzite silicon nanocrystals have been fabricated by using the cluster‐beam evaporation technique. The X‐ray diffraction patterns of the as‐deposited films indicate the presence of Si crystallites with sizes in the nanometer range. The Bragg angles of the reflection peaks are not of the ordinary diamond structure but of the wurtzite structure. The Raman spectra further support the presence of the wurtzite structure. X‐ray photoelectron spectroscopy shows that these Si nanocrystals are enclosed in the oxide matrix. It is hypothesized that the wurtzite Si phase is formed by the nonequilibrium cluster formation process through adiabatic gaseous expansion.