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Optical and Electrical Studies on Band‐Overlapped Metallization of the Narrow‐Gap Semiconductor Black Phosphorus with Layered Structure
Author(s) -
Akahama Y.,
Kawamura H.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<349::aid-pssb349>3.0.co;2-f
Subject(s) - semiconductor , electrical resistivity and conductivity , semimetal , band gap , materials science , absorption edge , condensed matter physics , pressure coefficient , electronic band structure , polarization (electrochemistry) , chemistry , optoelectronics , electrical engineering , engineering , physics , mechanics
Electrical resistivity, infrared absorption and reflectivity measurements of a single crystal of black phosphorus have been carried out under pressure in order to clarify the semiconductor–semimetal transition. The resistivity showed a typical metallic temperature dependence at 1.8 GPa while a singular temperature dependence was observed at 1.5 and 1.7 GPa. The absorption edge at 300 K showed a low‐energy shift with a pressure coefficient of —1.64 eV/GPa and the dependence supposed the band‐gap closure at 1.7 GPa. Above 2.8 GPa, an increase of reflectivity was observed in the spectra for E ∥ c polarization below 1000 cm —1 and the increase was enhanced with pressure. These results evidently suggest that a semimetallic band configuration has formed at pressure higher than 1.7 GPa.