Premium
Pressure Dependence of Defect Emissions and the Appearance of Pressure‐Induced Deep Centers in Chalcopyrite Alloys Ag x Cu 1—x GaS 2
Author(s) -
Choi InHwan,
Yu P.Y.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<307::aid-pssb307>3.0.co;2-2
Subject(s) - chalcopyrite , alloy , materials science , semiconductor , metallurgy , copper , optoelectronics
We present the pressure dependence of the defect emissions in the chalcopyrite alloy semiconductor Ag x Cu 1— x GaS 2 for values of the alloy concentration x varying between 0 and 1. A large variation in the pressure coefficients of the different defect emissions with x was found. In one alloy concentration x = 0.25 deep levels were found to appear under pressure. Plausible explanations of our results have been proposed.