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Raman Scattering in CdGa 2 S 4 under Pressure
Author(s) -
Mitani T.,
Onari S.,
Allakhverdiev K.,
Gashimzade F.,
Kerimova T.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<287::aid-pssb287>3.0.co;2-b
Subject(s) - tetragonal crystal system , raman spectroscopy , raman scattering , phonon , phase transition , bulk modulus , materials science , bending , lattice (music) , phase (matter) , condensed matter physics , chemistry , crystallography , crystal structure , optics , physics , composite material , organic chemistry , acoustics
The Raman active modes of CdGa 2 S 4 were investigated at 300 K under pressure up to 14.11 GPa. Two stages in the pressure dependence of Raman bands were attributed to the order–disorder phase transition in the cation sublattice. A pressure induced reversible first‐order phase transition was observed at 14.11 GPa. Using the Harrison‐Keating model of the lattice dynamics modified for crystals with the tetragonal structure, the bulk modulus B and the mode‐Grüneisen parameters Γ i were determined for the first time. A better agreement between the experimental and calculated values of Γ i is observed, if one takes into consideration the different behaviour with pressure for the bond‐bending and the bond‐stretching parameters, which determine the low‐ (lower than 200 cm —1 ) and high‐ (higher than 200 cm —1 ) frequency phonons, respectively.