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Raman Spectra and Electronic Properties of HgTeS Crystals at High Pressure
Author(s) -
Ponosov Yu.S.,
Shchennikov V.V.,
Mogilenskikh V.E.,
Osotov V.I.,
Popova S.V.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<275::aid-pssb275>3.0.co;2-n
Subject(s) - raman spectroscopy , condensed matter physics , phonon , semiconductor , materials science , magnetoresistance , electron , phase (matter) , chemistry , analytical chemistry (journal) , magnetic field , physics , optics , optoelectronics , chromatography , quantum mechanics , organic chemistry
The results of transverse magnetoresistance (MR) and Raman spectrum (RS) measurements (in the region 80–160 cm –1 ) of Hg 1– x Te x S crystals (0.04 ≤ x ≤ 0.6) at room temperature and high pressure P up to 1.6 GPa are presented. The galvanomagnetic measurements show the change of electronic structure and charge carrier concentration as the sulphur content is rising. The increasing of MR under P and, hence, the increase of electron mobility agree with the certain model of electronic structure of gapless semiconductors. Three HgTe‐like phonon Raman modes were observed near about 90, 120 and 140 cm –1 , and one mode near 100 cm –1 , which was shifted to lower frequencies in the sulphur‐rich samples in accordance with theoretical predictions. At P = 1.6 GPa, above the onset of pressure‐induced phase, two α‐HgS like peaks near 90 cm –1 were observed.