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Optical Absorption Spectra of β‐FeSi 2 under Pressure
Author(s) -
Takarabe K.,
Teranisi R.,
Oinuma J.,
Mori Y.,
Suemasu T.,
Chichibu S.,
Hasegawa F.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<259::aid-pssb259>3.0.co;2-f
Subject(s) - epitaxy , attenuation coefficient , materials science , absorption (acoustics) , semiconductor , substrate (aquarium) , band gap , spectral line , absorption spectroscopy , analytical chemistry (journal) , optoelectronics , direct and indirect band gaps , optics , chemistry , nanotechnology , physics , composite material , oceanography , layer (electronics) , geology , chromatography , astronomy
By a high pressure optical absorption experiment on epitaxially grown β‐FeSi 2 on Si (001) substrate, it is reported that the evaluated linear pressure coefficient of the direct band gap is smaller than that of common semiconductors.