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Raman Study of Elastically Strained Bulk and Layered Structures Based on CdTe
Author(s) -
Stergiou V.C.,
Raptis Y.S.,
Anastassakis E.,
Pelekanos N.T.,
Nahmani A.,
Cibert J.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<237::aid-pssb237>3.0.co;2-v
Subject(s) - raman spectroscopy , cadmium telluride photovoltaics , phonon , materials science , photoluminescence , condensed matter physics , strain (injury) , field (mathematics) , quantum well , piezoelectricity , optoelectronics , optics , physics , composite material , medicine , laser , mathematics , pure mathematics
Bulk CdTe bars under uniaxial stress, as well as single and multiple CdTe strained quantum wells (QWs), with varying barrier composition (degree of strain), have been studied by resonant Raman spectroscopy and photoluminescence excitation (PLE) at low temperature ( T ≤ 90 K). Combining, a) piezo‐Raman results from bulk CdTe samples, b) misfit‐strain‐induced and piezoelectric‐field‐induced phonon shifts measured on QWs, and c) measured Grneisen parameters, we estimate strain‐ and field‐ Phonon Deformation Potentials (PDPs) for the TO and LO phonons of CdTe.