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Pressure Dependence of Raman Linewidth in Semiconductors
Author(s) -
Debernardi A.,
Ulrich C.,
Cardona M.,
Syassen K.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<213::aid-pssb213>3.0.co;2-i
Subject(s) - phonon , anharmonicity , laser linewidth , semiconductor , raman spectroscopy , condensed matter physics , materials science , density functional theory , semiconductor materials , perturbation theory (quantum mechanics) , chemistry , physics , optics , computational chemistry , optoelectronics , quantum mechanics , laser
The pressure dependences of the phonon lifetimes of zone‐center optical phonons of various group IV and III–V semiconductors are calculated from first principles using third‐order density‐functional perturbation theory. The microscopic mechanism responsible, i.e. the anharmonic decay of a phonon into phonons of different energy, is revealed and the sensitive dependence on pressure is studied in detail. The results are compared with recent measurements of the pressure dependence of the linewidths of the first order Raman lines of Si, Ge, and SiC.