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Effects of Confinement on the Coupling between Nitrogen and Band States in InGaAs 1—x N x /GaAs (x ≤ 0.025) Structures: Pressure and Temperature Studies
Author(s) -
Choulis S.A.,
Weinstein B.A.,
Hosea T.J.C.,
KamalSaadi M.,
O'Reily E.P.,
Adams A.R.,
Stolz W.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<151::aid-pssb151>3.0.co;2-e
Subject(s) - quantum well , coupling (piping) , band gap , condensed matter physics , linear relationship , nitrogen , liquid nitrogen , electronic band structure , materials science , reflectivity , chemistry , analytical chemistry (journal) , optics , physics , laser , statistics , mathematics , organic chemistry , chromatography , metallurgy
We report photo‐modulated reflectance studies under applied pressure and variable temperature, and related calculations, that probe the influence of N‐related resonant anti‐bonding states on the electronic structure of dilute III–N–V quantum wells (QWs). Three In y Ga 1— y As 1— x N x /GaAs multiple QW samples with N contents of 0–2.5% are investigated up to 85 kbar at 300 K, and for 300–10 K at 1 atm. While the temperature dependence is only minimally affected by the N content, the pressure shifts of the intersubband transition energies depend significantly on the percentage of N. The linear pressure coefficients are much smaller than those of the InGaAs band gap. A ten‐band k · p model is in broad accord with the observed pressure dependence; the predicted non‐linear shift is somewhat larger than measured.