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Semiconductor–Metal Transition in Liquid As 2 Se 3 at High Temperatures under Pressure
Author(s) -
Hosokawa S.,
Pilgrim W.C.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<145::aid-pssb145>3.0.co;2-2
Subject(s) - diffraction , semiconductor , materials science , metal , condensed matter physics , transition metal , liquid metal , crystallography , chemistry , optics , composite material , physics , metallurgy , optoelectronics , catalysis , biochemistry
New results of an X‐ray diffraction measurement on liquid As 2 Se 3 up to 1600 °C and 8 MPa are presented to investigate the relation between the prepeak or the intermediate‐range order (IRO) and the semiconductor–metal (SC–M) transition. In the metallic region, the prepeak changes to a shoulder, but the shoulder or a trace of the intermediate correlation still remains at the highest temperature of 1600 °C in the present measurements. The change from the peak to the shoulder on the SC–M transition is not caused by the disappearance of the prepeak but by its rapid broadening. The IRO in the semiconducting liquid basically survives in the metallic liquid and a large fluctuation of the correlation length is induced in the IRO.