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Pressure Dependence of the Barrier Height in Tunnel n‐GaAs/Au Junctions
Author(s) -
Dizhur E.M.,
Shulman A.Ya.,
Kotelnikov I.N.,
Voronovsky A.N.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200101)223:1<129::aid-pssb129>3.0.co;2-v
Subject(s) - quantum tunnelling , schottky barrier , condensed matter physics , poisson's equation , semiconductor , schottky diode , cylinder , schottky effect , materials science , physics , optoelectronics , geometry , quantum mechanics , diode , mathematics
The theory of tunnel current–voltage ( I – V ) characteristics of metal–semiconductor junctions based on the self‐consistent solution of the Poisson equation allows to get the Schottky‐barrier height and the charged impurity concentration directly from the tunneling data. This approach was applied to the analysis of low‐temperature experiments on tunneling under pressure up to 3 GPa in a piston‐cylinder gauge. Here we present the barrier height versus pressure for heavily doped n‐GaAs(Te)/Au ( N e ≈ (5 — 7) × 10 18 cm —3 ) tunnel junctions and compare the obtained pressure dependence of the Schottky barrier with the known behavior of the band gap under pressure taking into account the influence of the L‐ and X‐valleys and DX centers.