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Strain Induced Electronic Alterations of Dislocation Mobility GeSi Layers
Author(s) -
Albrecht M.,
Strunk H.P.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200011)222:1<95::aid-pssb95>3.0.co;2-x
Subject(s) - dislocation , condensed matter physics , strain (injury) , materials science , activation energy , doping , fermi level , charge (physics) , stress (linguistics) , fermi energy , chemistry , physics , quantum mechanics , medicine , linguistics , philosophy , electron
The stress in strained Ge x Si 1– x layers reduces, according to Hull et al. [Appl. Phys. Lett. 65 , 327 (1994)] the activation energy for dislocation glide with increasing x . We explain this observation with the Fermi‐level shift due to strain‐induced band gap narrowing. We start from Jones' approach [Phil. Mag. B 42 , 213 (1980)] to the effect of doping on dislocation mobility and consider the influence of the Fermi‐level shift on the charge of kinks and thus the activation energy for dislocation glide. Using this model we can calculate the strain induced activation energy reduction without the necessity to use a fitting parameter.