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Influence of Dislocations on I – V Characteristics of Schottky Diodes Prepared on n‐Type 6H‐SiC
Author(s) -
Barbot J.F.,
Blanchard C.,
Demenet J.L.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200011)222:1<159::aid-pssb159>3.0.co;2-i
Subject(s) - dislocation , schottky diode , materials science , condensed matter physics , diode , transmission electron microscopy , basal plane , quantum tunnelling , diamond , crystallography , optoelectronics , chemistry , nanotechnology , composite material , physics
The quantitative effects of dislocations on the I – V characteristics of n‐type 6H‐SiC Schottky diodes were determined by deliberately introducing dislocations into localized regions. Schottky diodes were fabricated upon scratched {0001} surfaces with a diamond scriber. Transmission electron microscopy observations showed differences in dislocation type and character introduced along the scratched faces whereas the dislocation density did not vary. On the other hand, only weak differences in the I – V characteristics were observed. Whatever the scratched {0001} face may be, the current–voltage characteristics obtained after the deformation step exhibited a bulge toward the low forward bias which was unambiguously attributed to the presence of dislocations on the basal plane within the space charge region. A mechanism involving tunneling effect from dislocation cores has been suggested.