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Carrier Dynamics in Stacked InP/GaInP Quantum Dots
Author(s) -
Christ A.,
Giessen H.,
Rühle W.W.,
Korona K.,
Kuhl J.,
Zundel M.,
Manz Y.,
Eberl K.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<59::aid-pssb59>3.0.co;2-d
Subject(s) - photoluminescence , quantum dot , excited state , relaxation (psychology) , materials science , electron , coupling (piping) , optoelectronics , condensed matter physics , molecular physics , atomic physics , chemistry , physics , psychology , social psychology , quantum mechanics , metallurgy
We measured time and spectrally resolved, resonantly and nonresonantly excited photoluminescence of self‐assembled vertically aligned InP/(GaIn)P quantum dots on GaAs substrates with various spacer thicknesses (2, 4, 8, and 16 nm) between the dot layers. The different interdot coupling in the various structures leads to considerable differences in the electron relaxation process. Carriers tunnel in the vertically aligned dot stacks to the lowest energy state when the spacer thickness is small, resulting in a pronounced red shift and slowing down of the photoluminescence decay. We present simple models to explain the results of our measurements.