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Sub‐Gap Excited Photoluminescence in III–V Compound Semiconductor Heterostructures
Author(s) -
Kalem S.,
Curtis A.,
Hartmann Q.,
Moser B.,
Stillman G.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<517::aid-pssb517>3.0.co;2-m
Subject(s) - photoluminescence , heterojunction , superlattice , excitation , materials science , band gap , excited state , photoluminescence excitation , quantum well , optoelectronics , semiconductor , condensed matter physics , atomic physics , optics , physics , laser , quantum mechanics
Photoluminescence (PL) above the excitation energy is observed in a single GaAs–InGaP quantum well (QW) and heterostructure as well as in a InP–GaAs superlattice (SL) and in strained layers. It is shown that sub‐gap excitation (1.468 eV) of n‐type δ‐doped GaAs/GaInP quantum structure leads to an up‐converted hot carrier PL emission with energy gains as high as 450 meV. The up‐conversion energy in GaAs–InGaP heterostructures is 50 meV which is originated from the GaAs layer. In InP–GaAs SL, the sub‐gap excitation results in a hot PL at 1.55 eV. It is also shown that the sub‐gap excitation can be used to confirm the changes in band energies of a strained layer.