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Temperature Dependent Dephasing of Excitons and Trions in a ZnMgSe/ZnSe Single Quantum Well
Author(s) -
Wagner H.P.,
Tranitz H.P.,
Schuster R.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<499::aid-pssb499>3.0.co;2-n
Subject(s) - dephasing , trion , exciton , biexciton , laser linewidth , excited state , quantum well , condensed matter physics , electron , photoluminescence , atomic physics , binding energy , materials science , physics , chemistry , optics , quantum mechanics , laser
We investigate the dephasing of excitons and negatively charged excitons (trions) in ZnSe/Zn 0.9 Mg 0.1 Se single quantum wells by temperature dependent spectrally resolved transient four‐wave mixing. The trion transition shows a binding energy of 3 meV and is discriminated from the biexciton by its temperature dependence. The measurements exhibit a significant enhancement of the exciton dephasing at low temperatures due to the presence of incoherent electrons which are optically excited from the GaAs substrate and captured by the quantum well. With rising temperature the accumulated electron density is reduced due to thermal activation leading to a significant decrease of the exciton homogeneous linewidth.