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Linewidth Statistics of Single InGaAs Quantum Dot Photoluminescence Lines
Author(s) -
Leosson K.,
Jensen J.R.,
Hvam J.M.,
Langbein W.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<49::aid-pssb49>3.0.co;2-f
Subject(s) - laser linewidth , quantum dot , photoluminescence , spectroscopy , condensed matter physics , phonon , luminescence , emission spectrum , spectral line , atomic physics , physics , materials science , molecular physics , optics , optoelectronics , laser , quantum mechanics
We have used photoluminescence spectroscopy with high spatial and spectral resolution to measure the linewidths of single emission lines from In 0.5 Ga 0.5 As/GaAs self‐assembled quantum dots. At 10 K, we find a broad, asymmetric distribution of linewidths with a maximum at 50 μeV. The distribution of linewidths is not significantly influenced by small variations in the quantum dot confinement potential. We claim that the wider transition lines are broadened by local electric field fluctuations while narrower lines are homogeneously broadened by acoustic‐phonon interactions. The width of narrow single‐dot luminescence lines depends only weakly on temperature up to 50 K, showing a broadening of 0.4 μeV/K. Above 50 K, a thermally activated behavior of the linewidth is observed. This temperature dependence is consistent with the discrete energy level structure of the dots.