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Dephasing Due to Carrier–Carrier Scattering in 2D
Author(s) -
Hügel W.A.,
Heinrich M.F.,
Wegener M.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<473::aid-pssb473>3.0.co;2-i
Subject(s) - dephasing , scattering , carrier scattering , condensed matter physics , quantum well , range (aeronautics) , materials science , physics , optics , laser , composite material
We show that there is no significant difference in the dephasing due to carrier–carrier scattering between bulk GaAs and GaAs quantum wells. This is in contrast to previous experimental work with worse dynamic range.