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Kinetics of Two‐Dimensional Electrons and Holes in Tunneling Silicon MOS Structures
Author(s) -
Altukhov P.D.,
Kuzminov E.G.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<439::aid-pssb439>3.0.co;2-a
Subject(s) - quantum tunnelling , electron , silicon , materials science , electroluminescence , rectangular potential barrier , diode , optoelectronics , substrate (aquarium) , quantum well , laser , physics , nanotechnology , optics , oceanography , layer (electronics) , geology , quantum mechanics
A recombination radiation line (S‐line) of surface 2D holes and 2D nonequilibrium electrons is observed in electroluminescence spectra of tunneling [100] silicon MOS (metal–oxide–semiconductor) diodes under tunneling injection of electrons into a selforganized electron quantum well. The electron quantum well in presence of an electrical field in the substrate forms an additional potential barrier. The transparency of a double barrier, including the oxide barrier and the additional barrier, can be modulated by the electrical field in the substrate. A possible realization of a tunneling ballistic transistor (tullistor) by use of this modulation is discussed. The tullistor can serve as a fast and effective light emitter or a laser and as a fast photodetector. A simple theory of the tullistor is given. Kinetics of 2D electrons and holes and corresponding kinetics of electroluminescence are analyzed.