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Carrier–Carrier Correlations and Their Effect on Optically Excited Single Semiconductor Quantum Dots
Author(s) -
Dekel E.,
Regelman D.,
Gershoni D.,
Ehrenfreund E.,
Schoenfeld W.V.,
Petroff P.M.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<43::aid-pssb43>3.0.co;2-e
Subject(s) - photoluminescence , quantum dot , excited state , exciton , excitation , photoluminescence excitation , spectral line , semiconductor , materials science , spontaneous emission , radiative transfer , carrier lifetime , atomic physics , biexciton , molecular physics , physics , optoelectronics , condensed matter physics , laser , optics , silicon , quantum mechanics
We resolve spatially, spectroscopically and temporally the photoluminescence emission from single self‐assembled In(Ga)As/GaAs quantum dots. The rich photoluminescence spectrum and its evolution with time after pulse excitation and with the density of excitation is experimentally measured and analyzed using a theoretical multiexciton model. From the quantitative agreement between the measured and calculated spectra, the radiative lifetime of a single quantum dot exciton is unambiguously determined.