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Theory of Ultrafast Rayleigh Scattering in Semiconductor Quantum Wells
Author(s) -
Savona V.,
Runge E.,
Zimmermann R.,
Haacke St.,
Deveaud B.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<365::aid-pssb365>3.0.co;2-i
Subject(s) - rayleigh scattering , exciton , quantum well , scattering , semiconductor , physics , intensity (physics) , condensed matter physics , coherent backscattering , atomic physics , effective mass (spring–mass system) , microscopic theory , optics , quantum mechanics , laser
The Rayleigh scattering of light at resonance with the ground state exciton transition in quantum wells is studied by means of a microscopic model. The disorder‐induced localization of the exciton center‐of‐mass leads to characteristic features of the scattered intensity which can help understanding the outcome of secondary emission experiments. In particular, the connection between time‐resolved scattering and energy‐level statistics, and the enhancement of the backscattered intensity in angle‐resolved measurements are discussed.