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Excited Bound Excitons in Disordered Semiconductor Quantum Wells
Author(s) -
Jaziri S.,
Ferreira R.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<337::aid-pssb337>3.0.co;2-m
Subject(s) - exciton , excited state , quantum well , condensed matter physics , physics , oscillator strength , semiconductor , bound state , perturbation (astronomy) , perturbation theory (quantum mechanics) , atomic physics , quantum mechanics , laser , spectral line
We discuss theoretically the role of disorder for the excited exciton states of quantum wells. We show that the ratio between 2S‐to‐1S oscillator strength is significantly increased in the presence of disorder as compared to the situation for a non‐disordered structure. This is because excitons in excited states more efficiently average out the disorder perturbation. The Fano‐like disintegration of localized 2S states into the continuum of 1S states is also considered.