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Biexcitons in Semiconductor Microcavities
Author(s) -
Dasbach G.,
Baars T.,
Bayer M.,
Forchel A.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<319::aid-pssb319>3.0.co;2-m
Subject(s) - polariton , biexciton , exciton , semiconductor , degenerate energy levels , physics , coupling (piping) , condensed matter physics , dispersion (optics) , mixing (physics) , resonator , field (mathematics) , laser , planar , optical microcavity , optoelectronics , optics , materials science , quantum mechanics , computer graphics (images) , computer science , metallurgy , mathematics , pure mathematics
Abstract The properties of a planar semiconductor microcavity in the strong coupling regime have been studied by spectrally resolved degenerate four‐wave‐mixing using fs laser pulses. In addition to the conventional cavity polaritons new spectral features, which are of biexcitonic origin can be resolved. The coupling of these states to the light field of the resonator has been studied by investigating their cavity detuning dependence. The observed dispersion agrees with a bipolariton model, where the exciton to biexciton transition is strongly coupled to the electro‐magnetic field in the cavity.

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