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Spectral Diffusion of Single InP/Ga x In 1—x P Quantum Dot Luminescence
Author(s) -
Blome P.G.,
Wenderoth M.,
Hübner M.,
Ulbrich R.G.,
Porsche J.,
Scholz F.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200009)221:1<31::aid-pssb31>3.0.co;2-s
Subject(s) - quantum dot , wetting layer , photoluminescence , luminescence , spectroscopy , condensed matter physics , materials science , diffusion , atomic physics , molecular physics , chemistry , optoelectronics , physics , quantum mechanics , thermodynamics
High spatial resolution photoluminescence spectroscopy of single self‐assembled InP quantum dots in a Ga 0.5 In 0.5 P matrix reveal an abrupt change from the common but yet unclear broad emission band at low temperatures to narrow lines at T ≥ 45 K. The emission into narrow lines even at higher temperatures is the expected behaviour for a fully confined quantum system. The spectrally broad emission (several meV) from individual quantum dots at low temperatures is explained by fluctuating charge configurations surrounding the quantum dot and causing spectral diffusion of the transition energies via the quantum‐confined Stark effect. The interacting charges are trapped by thickness variations in the surrounding wetting layer. At higher temperatures these traps are depleted due to the shift of the Fermi level E F below the energy of the corresponding states in the wetting layer.