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Molecular Beam Epitaxial Growth of ZnSe Layers on GaAs and Si Substrates
Author(s) -
LópezLópez M.,
MéndezGarcía V.H.,
MeléndezLira M.,
LuyoAlvarado J.,
Tamura M.,
Momose K.,
Yonezu H.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<99::aid-pssb99>3.0.co;2-8
Subject(s) - molecular beam epitaxy , reflection high energy electron diffraction , x ray absorption spectroscopy , transmission electron microscopy , epitaxy , materials science , photoluminescence , electron diffraction , layer (electronics) , optoelectronics , crystal (programming language) , crystal growth , absorption spectroscopy , spectroscopy , analytical chemistry (journal) , diffraction , chemistry , crystallography , optics , nanotechnology , physics , quantum mechanics , chromatography , computer science , programming language
We present a study of the molecular beam epitaxial (MBE) growth of ZnSe layers on GaAs and Si substrates. For the growth on GaAs substrates we investigated the effects of introducing buffer layers of Al x Ga 1— x As and In x Ga 1— x As. The characterization by reflection high‐energy electron diffraction (RHEED), atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL) showed that best ZnSe crystal quality was obtained on buffer layers of Al x Ga 1— x As and In x Ga 1— x As with x = 0.01. Moreover, an analysis by secondary ion mass spectroscopy (SIMS) revealed that the use of AlGaAs buffer layers effectively suppresses the Ga segregation onto the ZnSe layer surfaces. On the other hand, for the growth of ZnSe on Si substrates, we achieved a significant improvement in the crystal quality of ZnSe by irradiating the Si substrates with a plasma of nitrogen prior to the MBE growth.