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Conductivity and Tunneling in Epitaxial Bi 2 Sr 2 Ca 1–x Y x Cu 2 O 8+δ Thin Films
Author(s) -
Baca E.,
Salinas A.,
Holguin V.,
Prieto P.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<535::aid-pssb535>3.0.co;2-p
Subject(s) - yttrium , quantum tunnelling , electrical resistivity and conductivity , materials science , epitaxy , sputtering , thin film , condensed matter physics , planar , activation energy , layer (electronics) , analytical chemistry (journal) , oxide , composite material , optoelectronics , chemistry , nanotechnology , electrical engineering , metallurgy , organic chemistry , chromatography , computer science , engineering , physics , computer graphics (images)
We performed a study on the preparation conditions and transport properties of Bi 2 Sr 2 Ca 1– x Y x Cu 2 O 8+ δ thin films, and carried out tunneling measurements in planar type junctions using a Bi 2 Sr 2 YCu 2 O 8+ δ (22Y2, for x = 1.00) layer for the insulation of two Bi 2 Sr 2 CaCu 2 O 8+ δ (2212, for x = 0.00) electrodes. The deposition of the films was carried out by a high oxygen pressure dc‐sputtering technique. By increasing the yttrium content x the temperature dependence of the electrical resistivity changes from a metallic to an insulating behavior. Our measurements show a decrease in the critical temperature T c with increasing yttrium content. An energy gaplike structure near 45 meV was observed in the planar‐type junctions. The zero bias anomaly observed is interpreted in terms of the Anderson‐Appelbaum model.