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Concentration and Mobilities of Holes and Electrons in Bi‐2223 Thin Films from Analysis of Resistivity and Hall Effect Data
Author(s) -
Sánchez P.,
Sánchez H.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<531::aid-pssb531>3.0.co;2-4
Subject(s) - van der pauw method , hall effect , electrical resistivity and conductivity , condensed matter physics , electron , thin film , materials science , physics , nanotechnology , quantum mechanics
Abstract Hall effect and resistivity measurements in Bi‐2223 thin films were carried out using the van der Pauw method. A two‐band model involving holes and electrons was used to fit the experimental data. The analysis showed that the resistivity and Hall coefficient are mainly hole dependent. However, the electron contribution to the Hall coefficient cannot be ruled out.