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Polar Scattering Rates in II–VI Semiconductor Quantum Wells
Author(s) -
Camacho B. A.S.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<53::aid-pssb53>3.0.co;2-f
Subject(s) - quantum well , scattering , condensed matter physics , phonon , scattering rate , phonon scattering , heterojunction , polaron , electron , physics , semiconductor , chemistry , optics , quantum mechanics , laser
The electronic scattering due to optical phonons in quantum wells (QWs) is investigated by using a many body perturbative formalism. After analyzing real and imaginary parts of self‐energy for a confined electron gas interacting with confined LO‐phonons, we concentrate on the imaginary part or scattering rates of electrons in II–VI quantum wells. A detailed study of scattering rates as function of temperature, well‐width and carrier concentration for screened and unscreened potential is presented. A comparison of damping between GaAs and CdTe QWs is made; in addition to that, the behavior of CdTe heterostructures as function of well‐width, temperature, carrier concentration and screening is followed. Confinement of LO‐phonons influences definitely the scattering rates in quantum wells. Particularly in II–VI materials it offers the possibility of tuning scattering rates and polaron life time with the electron layer width.