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Photorefractive Beam‐Coupling Measurement of the Nonlinear Refractive Index of Semiconductor Films
Author(s) -
Garcia H.,
Johnson A.M.,
Trivedi Sudhir
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<47::aid-pssb47>3.0.co;2-u
Subject(s) - photorefractive effect , materials science , optics , refractive index , semiconductor , grating , fiber bragg grating , coupling coefficient of resonators , coupling (piping) , optical fiber , optoelectronics , graded index fiber , fiber optic sensor , physics , resonator , metallurgy
The nonlinear refractive index n 2 of short lengths (<25 m) of a 20 m silica fiber were measured by photorefractive beam‐coupling of 53 ps, 1064 nm pulses that experienced self‐phase modulation (SPM) in the fiber. The resultant Induced Grating Autocorrelation (IGA) response yields a value of n 2 and a calibration standard for the fiber. By coupling the 1064 nm signal pulse into a semiconductor film and taking the output and coupling it into the calibrated fiber, the modified IGA response, with respect to the fiber alone, results in both the sign and the magnitude of n 2 of the semiconductor film. The sign and magnitude of n 2 for 1 mm thick GaAs, ZnTe, and CdTe films have been measured by noting the modified IGA response – the temporal shift of the photorefractive beam‐coupling response due to SPM in the semiconductor.