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Temperature and Isotopic Mass Dependence of the Direct Band Gap in Semiconductors: LCAO Calculations
Author(s) -
Olguín D.,
Cantarero A.,
Cardona M.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<33::aid-pssb33>3.0.co;2-j
Subject(s) - linear combination of atomic orbitals , direct and indirect band gaps , effective mass (spring–mass system) , semiconductor , band gap , condensed matter physics , atomic physics , materials science , chemistry , electron , physics , atomic orbital , optoelectronics , quantum mechanics
Using perturbation theory, within a tight‐binding (LCAO) approach, we have calculated the effects of electron–phonon interaction on the lowest direct band gap of Ge, GaAs and ZnSe. The agreement of the calculated temperature coefficient with experimental data is satisfactory. Following our approach, we have also calculated the dependence of the direct band gap on isotopic mass. The results are in close agreement with the experimental data.