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Porous Silicon Growth by Lateral Anodization
Author(s) -
Marotti R.E.,
Rondoni A.,
Quagliata E.,
Dalchiele E.A.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200007)220:1<319::aid-pssb319>3.0.co;2-p
Subject(s) - porous silicon , luminescence , photoluminescence , materials science , anodizing , hydrofluoric acid , scanning electron microscope , silicon , etching (microfabrication) , porosity , chemical engineering , anode , aqueous solution , porous medium , nanotechnology , analytical chemistry (journal) , optoelectronics , chemistry , composite material , electrode , metallurgy , aluminium , layer (electronics) , engineering , chromatography
We describe our first results on porous silicon (π‐Si) preparation and characterization. The π‐Si is obtained by anodic etching of crystalline silicon (c‐Si) in an aqueous solution of ethanol and hydrofluoric acid. The samples were prepared by both lateral cell configuration and the usual single cell configuration, only for comparison. We studied their structure by scanning electron microscopy (SEM), and their photoluminescence by exciting them with ultraviolet light (350 to 400 nm). Samples prepared by the lateral cell configuration, showed a more efficient luminescence in the red region (peaked at 650 nm) than those prepared by the single cell process. Although this luminescence was not homogeneous, it was more stable in time than that emitted from the single cell samples. The inhomogeneous emission is a consequence of the pore morphology, originated by the preparation method. We developed a qualitative model for understanding this inhomogeneous emission through the understanding of the current density of the electrochemical preparation.